BCR1AM-8 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE PLANAR PASSIVATION TYPE

ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140 ^{OF CONDUCTION ANGLE}
NATURAL CONVECTION
120 NO FINS
100
RESISTIVE,
80
INDUCTIVE
LOADS
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7 TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10²
7
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
10^–1
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–40 0
40 80 120 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
I QUADRANT
100
80
60
III QUADRANT
40
20
0
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Feb.1999