BCR1AM-8 Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE PLANAR PASSIVATION TYPE

BCR1AM-8
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
OUTLINE DRAWING
φ5.0 MAX
4.4
Dimensions
in mm
• IT (RMS) ..................................................................... 1.0A
• VDRM ....................................................................... 400V
• IFGT ! ....................................................................... 5mA
• IRGT !, IRGT # .......................................... 5mA (3mA) ^V5
• IFGT # ..................................................................... 10mA
2
3
1
VOLTAGE
CLASS
TYPE
NAME
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
132
JEDEC : TO-92
APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines,
trigger circuit for low and medium triac, solid state relay,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ^V1
Non-repetitive peak off-state voltage ^V1
Voltage class
8
400
500
Symbol
IT (RMS)
ITSM
I^2t
Parameter
RMS on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=56°C ^V4
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
Ratings
Unit
1.0
A
10
A
0.41
A²s
1
W
0.1
W
6
V
1
A
–40 ~ +125
°C
–40 ~ +125
°C
0.23
g
Feb.1999