BCR1AM-8 Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE PLANAR PASSIVATION TYPE

GATE CHARACTERISTICS
10¹
7
5
3
VGM = 6V
2
PGM =
1W
PG(AV)
= 0.1W
10⁰
7
5
3
2
IFGT I
IRGT I
IRGT III
10^–1
7
5
3
2
IGM = 1A
IFGT III
VGD = 0.1V
10^–2
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
VFGT I, VRGT I
10²
7
5
4
3
VRGT III, VFGT III
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
2.0
1.6
1.2
360°
CONDUCTION
0.8
RESISTIVE,
INDUCTIVE
LOADS
0.4
0
0 0.4 0.8 1.2 1.6 2.0
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
IFGT III
2
10²
7 _{IFGT I IRGT I IRGT III}
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10² 2 3 5 7 10³ 2 3 5 7 10⁴ 2 3 5 7 10⁵
10³
7
5
3
2
JUNCTION TO AMBIENT
10²
7
5
3
JUNCTION TO CASE
2
10¹
7
5
3
2
10⁰
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
120
100
80
360°
CONDUCTION
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS ON-STATE CURRENT (A)
Feb.1999