BCR08AS-8 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7 TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10²
7
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
,,,,,,,,,,,,,,,,,,,,,,,,,,,^D,,,,,,,,,^IST,,,,,,,,,^RIB,,,,,,,,,^TUYT,,,,,,,,,^PIOIC,,,,,,,,,^NAL,,,,,,,,,^EX,,,,,,,,,^AM,,,,,,,,,^PLE
10^–1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10²
7
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
10^–1
,,,,,,,,,,^TTT,,,,,,,,,,^{222+––D,,,GGGI},,,,,,,,,,^{S+–+TR},,,,,,,,,,^TEIYXB,,,,,,,,,,^PAUIMTC,,,,,,,,,,^IPAOLLNTTE,,,,,,,,,,^2Y+,P,,,,,,,,,,^GIC– ,,,,,,,,,,^AL,,,,,,,,,,^EX,,,,,,,,,,^AMPLE
–40 0
40 80 120 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
I QUADRANT
80
60
III QUADRANT
40
20
0
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
10²
7
5
VOLTAGE WAVEFORM
t
3 ^(dv/dt)C
VD
2 _{CURRENT WAVEFORM}
10^{1 IT}
(di/dt)C
7
τ
t
5
3
2
TYPICAL
EXAMPLE
Tj = 125°C
IT = 1A
τ = 500µs
VD = 200V
f = 3Hz
III QUADRANT
10⁰
7
5
MINIMUM
3
2
CHARAC-
TERISTICS
I QUADRANT
VALUE
10^–1
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
Feb.1999