BCR08AS-8 Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR08AS-8
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
4.4±0.1
1.6±0.2
1.5±0.1
123
• IT (RMS) ..................................................................... 0.8A
• VDRM ....................................................................... 400V
• IFGT !, IRGT !, IRGT # ............................................. 5mA
• IFGT # ..................................................................... 10mA
0.5±0.07
0.4±0.07
1.5±0.1 1.5±0.1
(Back side)
0.4
+0.03
–0.05
2
3
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
SOT-89
APPLICATION
Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ^V1
Non-repetitive peak off-state voltage ^V1
Voltage class
8 (marked “B•”)
400
500
Symbol
IT (RMS)
ITSM
I^2t
Parameter
RMS on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Ta=40°C ^V4
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
Ratings
Unit
0.8
A
8
A
0.26
A²s
1
W
0.1
W
6
V
1
A
–40 ~ +125
°C
–40 ~ +125
°C
48
mg
Feb.1999