BCR08AS-8 Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
VFGT #
IFGT !
IRGT !
IRGT #
IFGT #
VGD
Rth (j-a)
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage ^V2
@
#
$
!
@
Gate trigger current ^V2
#
$
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VDRM applied
Tc=25°C, ITM=1.2A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ^V4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder.
Limits
Min. Typ. Max.
—
—
1.0
—
—
2.0
—
—
2.0
—
—
2.0
—
—
2.0
—
—
2.0
—
—
5
—
—
5
—
—
5
—
—
10
0.1
—
—
—
—
65
V3
—
—
Unit
mA
V
V
V
V
V
mA
mA
mA
mA
V
°C/ W
V/µs
Voltage
class
VDRM
(V)
8
400
(dv/dt) c
Min.
Unit
Test conditions
1. Junction temperature
Tj=125°C
2
V/µs
2. Rate of decay of on-state commutating current
(di/dt)c=–0.4A/ms
3. Peak off-state voltage
VD=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10¹
7
5
4
3
2
Tj = 125°C
10⁰
7
5
4
3
Tj = 25°C
2
10^–1
0
1
2
3
4
5
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
10
8
6
4
2
0
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999