RA03M9595M Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – 952-954MHz 3.0W 8.0V, 2 Stage Amp.

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANT RA03M9595M
TYPICAL PERFORMANCE (Tcase=+25deg.C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
10
9
η_T
8
7
6
5 V_DD=8.0V
4 ^VGG^=3.5V
3
P_in=50mW
P_OUT
2
1
ρ_IN
0
940
945
950
955
FREQUENCY f(MHz)
50
45
40
35
30
25
20
15
10
5
0
960
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
40
f=953MHz
35 _VDD=8.0V
30 ^VGG=3.5V
4.0
P_OUT
3.5
3.0
25
Gp
2.5
20
2.0
15
1.5
10
1.0
5
I_DD
0.5
0
-15 -10 -5 0 5 10 15
INPUT POWER P_IN(dBm)
0.0
20
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
7
3.5
f=953MHz
6 _Pin=50mW
P_out
3.0
5
V_DD=8.0V
2.5
4
2.0
3
I_DD
1.5
2
1.0
1
0.5
0
1.5
2.0 2.5 3.0 3.5
GATE VOLTAGE V_GG(V)
0.0
4.0
2^nd, 3^rd HARMONICS versus FREQUENCY
-20
-25
V_DD=8.0V
V_GG=3.5V
-30
P_in=50mW
-35
-40
-45
2^nd
-50
-55
3^rd
-60
940
945
950
955
960
FREQUENCY f (MHz)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
8
4.0
7 ^f=953MHz
Pin=50mW
6
V_GG=3.5V
P_out
3.5
3.0
5
2.5
4
2.0
3
I_DD
1.5
2
1.0
1
0.5
0
0.0
0
2
4
6
8
10
DRAIN VOLTAGE V_DD(V)
RA03M9595M
3/8
28 Jun 2010