RA03M9595M Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – 952-954MHz 3.0W 8.0V, 2 Stage Amp.

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANT RA03M9595M
MAXIMUM RATINGS (Tcase=+25deg.C. unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<3.5V, ZG=ZL=50ohm
VGG Gate Voltage
VDD<8.0V, Pin=0mW, ZG=ZL=50ohm
Pin
Pout
Tcase(OP)
Input Power
Output Power
Operation Case Temperature Range
f=952-954MHz, VGG<3.5V
ZG=ZL=50ohm
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
9.2
4
70
6
-30 to +90
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C , ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f
Frequency Range
Pout Output Power
IT
Total Current
2fo
2^nd Harmonic
3fo
3^rd Harmonic
ρin
Input VSWR
VDD=8.0V,VGG=3.5V, Pin=50mW
Pout=32dBm (Pin control),
VDD=8.0V,
VGG=3.5V
IGG Gate Current
— Stability
ZG=ZL=50ohm, VDD=4.0/8.0/9.2V, VGG=3.5V,
Pout=0.8/1.6/3W (Pin control), Load VSWR=4:1
—
Load VSWR Tolerance
VDD=9.2V, Pin=50mW, Pout=3W (VGG control),
Load VSWR=20:1
952
-
954
3.0
-
-
-
-
2.0
-
-
-30
-
-
-35
-
-
4:1
-
1
-
No parasitic oscillation
MHz
W
A
dBc
dBc
—
mA
—
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA03M9595M
2/8
28 Jun 2010