RA03M9595M Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – 952-954MHz 3.0W 8.0V, 2 Stage Amp.

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RA03M9595M
RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp.
DESCRIPTION
The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage
increases. With a gate voltage around 2.5V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 3V (typical) and 3.5V
(maximum). At V_GG=3.5V, the typical gate current is 1 mA.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I_DD≅0 @ V_DD=8.0V, V_GG=0V)
• P_out>3.0W @ V_DD=8.0V, V_GG=3.5V, P_in=50mW
• I_T<2.0A @ P_out=32dBm (Pin control), V_DD=8.0V, P_in=50mW
• Frequency Range: 952-954MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=3.5V
• Module Size: 30 x 10 x 5.4 mm
BLOCK DIAGRAM
2
3
1
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H46S
RoHS COMPLIANCE
• RA03M9595M-101 is a RoHS compliance products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA03M9595M-101
SUPPLY FORM
Antistatic tray,
50 modules/tray
RA03M9595M
1/8
28 Jun 2010