PS21562-P Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – AC100V~200V inverter drive for small power motor control.

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21562-P
TRANSFER-MOLD TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
Unit
VCC
Supply voltage
Applied between P-N
450
V
VCC(surge) Supply voltage (surge)
Applied between P-N
500
V
VCES
Collector-emitter voltage
600
V
±IC
Each IGBT collector current
Tf = 25°C
5
A
±ICP
Each IGBT collector current (peak)
Tf = 25°C, less than 1ms
10
A
PC
Collector dissipation
Tj
Junction temperature
Tf = 25°C, per 1 chip
16.7
W
(Note 1)
–20~+125
°C
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ Tf ≤ 100°C) however, to en-
sure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ Tf ≤ 100°C).
CONTROL (PROTECTION) PART
Symbol
Parameter
VD
Control supply voltage
VDB
Control supply voltage
VIN
Input voltage
VFO
Fault output supply voltage
IFO
Fault output current
VSC
Current sensing input voltage
Condition
Applied between VP1-VNC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS,
VWFB-VWFS
Applied between UP, VP, WP, UN, VN,
WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
Ratings
Unit
20
V
20
V
–0.5~VD+0.5
V
–0.5~VD+0.5
V
1
mA
–0.5~VD+0.5
V
TOTAL SYSTEM
Symbol
Parameter
VCC(PROT)
Self protection supply voltage limit
(short circuit protection capability)
Tf
Module case operation temperature
Tstg
Storage temperature
Viso
Isolation voltage
Condition
VD = 13.5~16.5V, Inverter part
Tj = 125°C, non-repetitive, less than 2 µs
(Note 2)
60Hz, Sinusoidal, 1 minute,
All connected pins to heat-sink plate
Ratings
400
–20~+100
–40~+125
2500
Unit
V
°C
°C
Vrms
Note 2 : Tf measurement point
Al Board Specification :
Dimensions : 100✕100✕10mm, Finishing : 12s, Warp : –50~100µm
Control Terminals
18mm
16mm
IGBT Chip
Temperature
NWV U P
measurement point
(inside the AI board) Power Terminals
FWDi Chip
Groove
Al Board
IGBT/FWDi Chip
Temperature measurement
point (inside the AI board)
Silicon-grease should be applied evenly with a thickness of 100~200µm
Sep. 2005