PS21212 Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – TRANSFER-MOLD TYPE INSULATED TYPE

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21212
TRANSFER-MOLD TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
Unit
VCC
Supply voltage
VCC(surge) Supply voltage (surge)
Applied between P-N
Applied between P-N
450
V
500
V
VCES
±IC
±ICP
PC
Tj
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
TC = 25°C
TC = 25°C, instantaneous value (pulse)
TC = 25°C, per 1 chip
(Note 1)
600
V
5
A
10
A
31
W
–20~+150
°C
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ TC ≤ 100°C) however, to in-
sure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C).
CONTROL (PROTECTION) PART
Symbol
VD
VDB
Parameter
Control supply voltage
Control supply voltage
VCIN
VFO
IFO
VSC
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
Condition
Applied between VP1-VPC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS,
VWFB-VWFS
Applied between UP, VP, WP-VPC, UN, VN,
WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
Ratings
Unit
20
V
20
V
–0.5~+5.5
V
–0.5~VD+0.5
V
15
mA
–0.5~VD+0.5
V
TOTAL SYSTEM
Symbol
Parameter
VCC(PROT) Self protection supply voltage limit
(short circuit protection capability)
TC
Module case operation temperature
Tstg
Storage temperature
Viso
Isolation voltage
Condition
VD = VDB = 13.5~16.5V, Inverter part
Tj = 125°C, non-repetitive, less than 2 µs
(Note 2)
60Hz, Sinusoidal, AC 1 minute, connection
pins to heat-sink plate
Ratings
400
–20~+100
–40~+125
1500
Unit
V
°C
°C
Vrms
Note 2 : TC MEASUREMENT POINT
Control pins
Heat sink boundary
DIP-IPM
Tc
Power pins
Aug. 1999