M54566DP Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
2.0
1.5
M54566DP
1.0
0.5
0
0
25
50
75
100
Ambient temperature Ta(℃)
Duty-Cycle-Collector current Characteristics
500
400
①
300
200
•The collector current values
100
represent the current per circuit.
•Repeated frequency > 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Vcc=5V •Ta = 25℃
0
0
20
40
60
80
②
③
④
⑤
⑥
⑦
100
Duty cycle (%)
DC Amplification Factor
Collector Current Characteristics
10 ⁴
7 _VCC=4V
5 ^VCE=4V
3
Ta=75℃
2
Ta=25℃
10 ³
Ta=-20℃
7
5
3
2
10
2
10
1
2 3 5 7 10 ²
2 3 5 7 10 ³
Collector current IC(mA)
Output Saturation Voltage
Collector current Characteristics
400
VCC=4V
VI=1V
300
Ta=75℃
200
Ta=25℃
Ta=-20℃
100
0
0
0.5
1.0
1.5
2.0
Output saturation voltage VCE(sat)(V)
Duty-Cycle-Collector current Characteristics
500
400
300
①
200
•The collector
current values
100 ^{represent the current per circuit.}
•Repeated frequency > 10Hz
•The value in the circle represents the value of the
simultaneously-operated circuit.
0 ^{•Vcc=5V •Ta = 75℃}
0
20
40
60
80
②
③
④
⑤
⑥
⑦
100
Duty cycle (%)
Grounded Emitter Transfer Characteristics
400
VCC=4V
VCE=4V
300
Ta=75℃
Ta=25℃
200
Ta=-20℃
100
0
0
0.4
0.8
1.2
1.6
Supply voltage-Input voltage VCC-VI(V)
Jul-2011
3