M54566DP Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54566DP is seven-circuit collector current sink type
darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated
circuits perform high-current driving with extremely low
input-current supply.
FEATURES
●High breakdown voltage (BVCEO> 50V)
●High-current driving (Ic(max) = 400mA)
●Active L-level input
PIN CONFIGURATION
IN1→ 1
IN2→ 2
INPUT
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
GND 8
16 →O1
15 →O2
14 →O3
13 →O4
12 →O5
11 →O6
10 →O7
9 VCC
OUTPUT
APPLICATIONS
Interfaces between microcomputers and high-voltage,
high-current drive systems, drives of relays and printers,
and MOS-bipolar logic IC interfaces.
Package type 16P2X-B
CIRCUIT DIAGRAM
FUNCTION
The M54566 is produced by adding PNP transistors to
M54522 inputs. Seven circuits having active L-level inputs
are provided.
Resistance of 8kΩ is provided between each input and
PNP transistor base. The input emitters are connected to
VCC pin (pin 9). Output transistor emitters are all
connected to the GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter
supply voltage is 50V maximum.
These ICs are optimal for drivers that are driven with N-
MOSIC output and absorb collector current.
INPUT
20K
2.7K
8K
7.2K
3K
VCC
OUTPUT
GND
The seven circuits share the VCC and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃)
Symbol
VCC
VCEO
IC
VI
Pd
Topr
Tstg
Parameter
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output , H
Current per circuit output, L
Ta = 25℃, when mounted on board
Ratings
Unit
10
V
– 0.5 ～ + 50
V
400
mA
– 0.5 ～ VCC
V
1.00
W
– 20 ～ + 75
℃
– 55 ～ + 125
℃
Jul-2011