M54566DP Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VO
IC
VIH
VIL
Parameter
Supply voltage
Output voltage
Collector current (Current per 1
circuit when 7 circuits are
coming on simultaneously)
VCC=5V
“H” input voltage
“L” input voltage
Duty Cycle
no more than 6%
Duty Cycle
no more than 20%
Limits
Unit
min
typ
max
4
5
8
V
0
－
50
V
0
－
350
mA
0
－
200
VCC-0.2 －
VCC
V
0
－ VCC－3 V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = －20～＋75℃）
Symbol
V(BR)CEO
VCE(sat)
II
ICC
hFE
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Input current
Supply current (one circuit
coming on)
DC amplification factor
Test conditions
ICEO = 100μA
VI = VCC－3V
VI = VCC－3.5V
IC = 350mA
IC = 200mA
VCC = 5V, VI = VCC－3.5V
VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25℃
min
50
－
－
－
－
2000
Limits
typ^＊
max
Unit
－
－
V
1.1
0.9
2.2
1.6
V
－0.3
－0.58
mA
1.4
3.0
mA
10000
－
－
*：The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃）
Symbol
Parameter
Test conditions
ton
Turn－on time
toff
Turn－off time
CL = 15pF（note 1）
Limits
Unit
min
typ
max
－
95
－
ｎｓ
－
2500
－
ｎｓ
NOTE 1 TEST CIRCUIT
INPUT
VCC
Measured
device
PG
50Ω
TIMING DIAGRAM
VO
RL
50%
INPUT
OUTPUT
OUTPUT
CL
50%
ｔon
(1) Pulse generator (PG) characteristics: PRR = 1kHz,
tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 1 to 4V
(2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
50%
50%
ｔoff
Jul-2011
2