FX6KMJ-3 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–20
TC = 25°C
Pulse Test
–16
–12
–8
ID = –12A
–4
–6A
–3A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
TC = 25°C
VDS = –10V
Pulse Test
–16
–12
–8
–4
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
3
2 _{TCh = 25°C}
f = 1MHZ
10³ VGS = 0V
7
5
Ciss
3
2
10²
7
5
3
–10⁰
–2 –3
–5 –7 –10¹
–2 –3
Coss
Crss
–5 –7 –10²
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX6KMJ-3
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
0.6
VGS = –4V
–10V
0.4
0.2
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
VDS = –10V
Pulse Test
10¹
7
TC = 25°C
75°C
125°C
5
3
2
10⁰
7
5
3
2–7_{–10–1 –2 –3 –5 –7 –100 –2 –3 –5 –7}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
TCh = 25°C
7 _{VDD = –80V}
5 VGS = –10V
RGEN = RGS = 50Ω
3
2
td(off)
10²
7
tf
5
3
2
10¹_{–7–10–1 –2 –3}
–5 –7 –10⁰
tr
td(on)
–2 –3 –5 –7
DRAIN CURRENT ID (A)
Jan.1999