FX6KMJ-3 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

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MITSUBISHI Pch POWER MOSFET
FX6KMJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –3A, VGS = –10V
ID = –3A, VGS = –4V
ID = –3A, VGS = –10V
ID = –3A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –80V, ID = –3A, VGS = –10V, RGEN = RGS = 50Ω
IS = –3A, VGS = 0V
Channel to case
IS = –6A, dis/dt = 100A/µs
Min.
–150
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
–1.5
0.41
0.45
–1.23
7.9
2420
152
69
14
18
156
58
–1.0
—
100
Max.
—
±0.1
–0.1
–2.0
0.53
0.59
–1.59
—
—
—
—
—
—
—
—
–1.5
5.00
—
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
–10²
–7
–5
–3
–2
–10¹
–7
–5
–3
–2
–10⁰
–7
–5
tw = 10µs
100µs
1ms
10ms
–3
–2 ^{TC = 25°C}
Single Pulse
DC
–10^–1
–2
–3
–5 –7–10¹
–2 –3
–5 –7–10²
–2
–3
–5 –7–10³
–2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
VGS = –10V
–6V
–16
–5V
–4V
–12
TC = 25°C
Pulse Test
–8
–3V
–4
PD = 25W
0
0
–4 –8 –12 –16 –20
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
VGS =
TC = 25°C
–8 Pulse Test
–6
–10V
–6V
–5V
–4V
–3.5V
–3V
–4
PD = 25W
–2
–2.5V
0
0
–2 –4 –6 –8 –10
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999