FX6KMJ-3 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

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FX6KMJ-3
MITSUBISHI Pch POWER MOSFET
FX6KMJ-3
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
• 4V DRIVE
• VDSS ............................................................. –150V
• rDS (ON) (MAX) ................................................ 0.53Ω
• ID ...................................................................... –6A
• Integrated Fast Recovery Diode (TYP.) .........100ns
• Viso ................................................................................ 2000V
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
2.54 ± 0.25
1.1 ± 0.2
E ^{1.1 ± 0.2}
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
123
3
1 GATE
1
2 DRAIN
3 SOURCE
2
TO-220FN
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
L = 100µH
Conditions
AC for 1minute, Terminal to case
Typical value
Ratings
–150
±20
–6
–24
–6
–6
–24
25
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
V
g
Jan.1999