FX6ASJ-06 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–5.0
–4.0
–3.0
–2.0
ID = –12A
–1.0
–6A
–3A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
Tc = 25°C
VDS = –10V
–16
Pulse Test
–12
–8
–4
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
10⁴
f = 1MHZ
7
VGS = 0V
5
3
2
Ciss
10³
7
5
3
2
Coss
10²
7
Crss
5
3
2
–3
–5–7–10⁰ –2 –3
–5–7–10¹ –2 –3
–5–7–10² –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX6ASJ-06
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
Tc = 25°C
Pulse Test
0.4
0.3
VGS = –4V
0.2
–10V
0.1
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10¹
7
5 TC =
125°C
75°C
25°C
3
2
10⁰
7
5
VDS = –5V
Pulse Test
3
2
10^–_–¹_{10–1 –2 –3 –5 –7–100 –2 –3 –5 –7–101}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
Tch = 25°C
2
VGS = –10V
VDD = –30V
10²
td(off) ^{RGEN = RGS = 50Ω}
7
5
4
tf
3
tr
2
td(on)
10¹
7
5
4
3
–5
–7–10^–1–2
–3
–5–7 –10⁰ –2 –3
–5–7 –10¹ –2 –3
–5
DRAIN CURRENT ID (A)
Jan.1999