FX6ASJ-06 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

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MITSUBISHI Pch POWER MOSFET
FX6ASJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –60V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –3A, VGS = –10V
ID = –3A, VGS = –4V
ID = –3A, VGS = –10V
ID = –3A, VDS = –5V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –30V, ID = –3A, VGS = –10V, RGEN = RGS = 50Ω
IS = –3A, VGS = 0V
Channel to case
IS = –6A, dis/dt = 100A/µs
Limits
Unit
Min.
Typ. Max.
–60
—
—
V
—
—
±0.1 µA
—
—
–0.1 mA
–1.3
–1.8
–2.3
V
—
0.16
0.21
Ω
—
0.27
0.37
Ω
—
–0.48 –0.63 V
—
4.9
—
S
—
1040
—
pF
—
171
—
pF
—
68
—
pF
—
13
—
ns
—
10
—
ns
—
63
—
ns
—
31
—
ns
—
–1.0
–1.5
V
—
—
4.17 °C/W
—
50
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
32
24
16
8
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
–10²
–7
–5
–3
tw =
–2
10µs
–10¹
–7
–5
100µs
–3
–2
1ms
–10⁰
–7
–5
–3
–2
TC = 25°C
Single Pulse
10ms
DC
–10^–1
–2
–3
–5 –7–10⁰
–2
–3
–5 –7–10¹
–2 –3
–5 –7–10²
–2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
Tc = 25°C
Pulse Test
VGS =
–10V
–8V
–6V
–16
PD = 30W
–5V
–12
–4V
–8
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
Tc = 25°C
Pulse Test
VGS = –10V
–8
–8V
–5V
–6V
–6
–4V
–4
–4
–3V
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
DRAIN-SOURCE VOLTAGE VDS (V)
–2
–3V
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999