FX6ASJ-06 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

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FX6ASJ-06
MITSUBISHI Pch POWER MOSFET
FX6ASJ-06
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
6.5
5.0 ± 0.2
4
Dimensions in mm
0.5 ± 0.1
• 4V DRIVE
• VDSS ............................................................... –60V
• rDS (ON) (MAX) ................................................ 0.21Ω
• ID ...................................................................... –6A
• Integrated Fast Recovery Diode (TYP.) ...........50ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
1.0
0.9 max
2.3 2.3
A
0.5 ± 0.2
0.8
123
3
1 GATE
1
2 DRAIN
3 SOURCE
4 DRAIN
24
MP-3
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 100µH
Typical value
Conditions
Ratings
–60
±20
–6
–24
–6
–6
–24
30
–55 ~ +150
–55 ~ +150
0.26
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999