FA01219A Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – GaAs FET HYBRID IC

TYPICAL CHARACTERISTICS 2
ACP vs f CHARACTERISTICS
-40
VD1=3.5V
VD2=3.5V
VG=-2.5V
-45 ^{PO=30.5dBm SET}
-50
-50k
+50k
-55
-60
+100k
-65
-100k
908.5
925
941.5
958
f(MHz)
974.5
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
ID vs f CHARACTERISTICS
800
750
700
650
600
550
500
450 ^VD1=3.5V
400
350
VD2=3.5V
VG=-2.5V
PO=30.5dBm SET
300
250
IDt
1D2
200
150
1D1
100
50
0
908.5
925
941.5
958
974.5
f(MHz)
Pin, R.L vs f CHARACTERISTICS
8.0
-2.0
7.0
-4.0
Pin
6.0
-6.0
5.0
R.L.
-8.0
4.0
-10.0
3.0
-12.0
2.0
1.0
0.0
908.5
925
VD1=3.5V
-14.0
VD2=3.5V
VG=-2.5V
-16.0
PO=30.5dBm SET
-18.0
941.5
958
974.5
f(MHz)
ID vs VD CHARACTERISTICS
800
750
700
650
IDt
600
550
ID2
500
450 f=925MHz
400 VG=-2.5V
350 ^{PO=30.5dBm SET}
300
250
200
150
ID1
100
50
0
3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4
VD(V)
Nov. ´97