FA01219A Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – GaAs FET HYBRID IC

MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
TYPICAL CHARACTERISTICS 1
Frequency
(MHz)
925.0
941.5
958.0
Pin
(dBm)
5.78
6.05
6.52
Po
(dBm)
30.5
30.5
30.5
Id1
(mA)
93
90
91
Id2
(mA)
552
547
543
Idt
(mA)
644
637
634
Ig1,2
(mA)
-1.86
-1.86
-1.86
-50k
(dBc)
-49.9
-51.7
-51.6
+50k
(dBc)
-49.2
-51.2
-51.6
-100k
(dBc)
-62.5
-63.6
-64.4
VD1=3.5V,VD2=3.5V,VG=-2.5V
+100k 2SP 3SP RL
(dBc) (dBc) (dBc) (dB)
-62.6 -37.5 -49.2 -10.7
-64.1 -37.4 -49.7 -9.4
-64.6 -37.2 -50.2 -8.5
PO,ACP vs Pin CHARACTERISTICS
35
-30
f=925MHz
VD1=3.5V
VD2=3.5V
30 _VG=-2.5V
-40
PO
25
ACP+50k
-50
ACP-50k
20
-60
ACP+100k
15
ACP-100k _-70
10
-5.0
0.0
5.0
Pin(dBm)
-80
10.0
PO,IDs vs Pin CHARACTERSTICS
35
1000
900
30
PO
800
700
25
IDt
600
500
ID2
20
400
300
15
200
ID1
100
10
0
-5
0
5
10
Pin(dBm)
Nov. ´97