FA01219A Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – GaAs FET HYBRID IC

DESCRIPTION
FA01219A is RF Hybrid IC designed for 0.8GHz band
small size handheld radio.
FEATURES
• Low voltage
• High gain
• High efficiency
• High power
3.5V
22.5B
50%
30.5dBm
APPLICATION
PDC0.8GHz
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
GND
1
8
2
7
3
6
4
5
GND
10.0
Unit:mm
0.8
2.0
6.0
tolerance:±0.2
1 RF INPUT
2 VD1
3 GND
4 VD2
5 RF OUTPUT
6 GND
7 GND
8 VG1,2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Condition
Tc
VD
Pin
TC(op)
Tstg
Drain voltage
Input power
Operation case temperature
Storage temperature
Po≤30.5dBm
ZG=ZL=50Ω
25˚C
25˚C
–
–
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
ELECTRICAL CHARACTERISTICS(Ta=25˚C)
Symbol
Parameter
f
Pin
IDt
ρin
ACP50
ACP100
2fo
3fo
Frequency
Input power
Po=30.5dBm
Total drain current
VD1=VD2=3.5V
Return loss
VG1,2=-2.5V
±50kHz adjacent channel power ^{ZG=ZL=50Ω}
±100kHz adjacent channel power ^{(π/4DQPSK)}
2nd harmonics
3rd harmonics
Ditto
(CW)
Test conditions
Ratings
4.5
15
-20 to +85
-30 to +90
Unit
V
dBm
˚C
˚C
Limits
Unit
Min Typ Max
925
–
958 MHz
–
5
8
dBm
–
640 720 mA
–
–
-6
dB
–
–
-47 dBc
–
–
-62 dBc
–
–
-30 dBc
–
–
-30 dBc
Nov. ´97