CM600DU-5F Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD 600 Amperes/1200 Volts

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
td(off)
7
5
td(on)
tf
3
2
10²
7
5
3
2
101¹ ₀₁
tr
2 3 5 7 10²
Conditions:
VCC = 100V
VGE = ±10V
RG = 4.2Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰ 2 3 5 7 10¹
10¹
7
5
IGBT part:
Per unit base = Rth(j–c) = 0.11°C/ W
3 _{FWDi part:}
2 _{Per unit base = Rth(j–c) = 0.20°C/ W}
10⁰
7
5
3
3
2
2
10^–1
7
5
10^–1
7
5
3
3
2
2
10^–2
7
5
3
2
10^–3
Single Pulse
TC = 25°C
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TMIE (s)
MITSUBISHI IGBT MODULES
CM600DU-5F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10³
7
5
3
trr
2
Irr
10²
7
5
3
2
10¹₁₀₁
23
5 7 10²
Conditions:
VCC = 100V
VGE = ±10V
RG = 4.2Ω
Tj = 25°C
Inductive load
2 3 5 7 10³
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 600A
16
VCC = 50V
12
VCC = 100V
8
4
0
0
1000 2000 3000 4000
500 1500 2500 3500 4500
GATE CHARGE QG (nC)
Mar. 2002