CM600DU-5F Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD 600 Amperes/1200 Volts

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
1200
Tj = 25°C
6.5
6.25
VGE =
1000 _15V
10
800
8
6
600
5.75
400
5.5
200
5.25
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
2
VGE = 10V
Tj = 25°C
1.6
Tj = 125°C
1.2
0.8
0.4
0
0 200 400 600 800 1000 1200
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
7 Tj = 25°C
5
3
2
10³
7
5
3
2
10²
7
5
3
2
10¹
0.6 0.8 1 1.2 1.4 1.6 1.8
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM600DU-5F
HIGH POWER SWITCHING USE
1200
1000
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
Tj = 25°C
Tj = 125°C
800
600
400
200
0
0
2
4
6
8
10
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
2
IC = 600A _{IC = 1200A}
IC = 240A
0
0 2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
Cies
10²
7
5
3
2
10¹
7
5
3
2
VGE = 0V
101⁰_{0–1 2 3 5 7 100 2 3}
Coes
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2002