CM1200HA-66H Datasheet, PDF (3/3 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
2400
2000
1600
1200
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj=25°C
VGE=13V
VGE=14V
VGE=15V
VGE=20V
VGE=12V
VGE=11V
VGE=10V
800
VGE=9V
400
VGE=8V
VGE=7V
0
0 1 2 3 4 5 6 7 8 9 10
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
2400
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE=10V
2000
1600
1200
800
400
Tj = 25°C
Tj = 125°C
0
0 2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE=15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0 500 1000 1500 2000 2500
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
7 Tj=25°C
5
3
2
10³
7
5
3
2
10²
7
5
3
2
10¹
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
Aug.1998