CM1200HA-66H Datasheet, PDF (2/3 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
Parameter
Conditions
Ratings
Unit
VCES
VGES
Collector-emitter voltage
Gate-emitter voltage
G-E Short
C-E Short
3300
V
±20
V
IC
Collector current
ICM
TC = 25°C
Pulse
1200
A
(Note 2)
2400
A
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Emitter current
Maximum collector dissipation
TC = 25°C
Pulse
TC = 25°C
1200
A
(Note 2)
2400
A
10420
W
Tj
Junction temperature
Tstg
Storage temperature
Viso
Isolation voltage
Main terminal to Base, AC for 1 minute
–40 ~ +150
°C
–40 ~ +125
°C
6000
V
Main terminals screw M8
6.67 ~ 8.24
N·m
—
Mounting torque
Mounting screw M6
2.84 ~ 3.43
N·m
Auxiliary terminals screw M4
0.88 ~ 1.08
N·m
—
Weight
Typical value
2.2
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
Min
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
Gate-emitter
VGE(th)
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
—
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 1200A, VGE = 15V
—
(Note 4)
—
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V
—
Cres
Reverse transfer capacitance ^{VGE = 0V}
—
QG
Total gate charge
VCC = 1650V, IC = 1200A, VGE = 15V
—
td (on)
Turn-on delay time
VCC = 1650V, IC = 1200A
—
tr
Turn-on rise time
VGE1 = VGE2 = 15V
—
td (off)
Turn-off delay time
RG = 2.5Ω
—
tf
Turn-off fall time
Resistive load switching operation
—
VEC (Note 1) Emitter-collector voltage
IE = 1200A, VGE = 0V
—
trr (Note 1) Reverse recovery time
IE = 1200A
—
Qrr (Note 1) Reverse recovery charge
die / dt = –2400A / µs
—
Rth(j-c)Q
IGBT part
—
Rth(j-c)R ^{Thermal resistance}
FWDi part
—
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied
—
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
—
6.0
—
4.40
4.80
130
7
3
10
—
—
—
—
3.30
—
300
—
—
0.006
Unit
Max
15 mA
7.5
0.5
5.72
—
—
—
—
—
1.60
2.00
2.50
1.00
4.29
1.20
—
0.012
0.024
—
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
°C/W
°C/W
°C/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998