CM1200HA-66H Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HA-66H
q IC ................................................................ 1200A
q VCES ....................................................... 3300V
q Insulated Type
q 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190
171
57±0.25
57±0.25
6 - M8 NUTS
C
C
CM
E
E
C
EG
3 - M4 NUTS
79.4
20.25
41.25
E
C
E
C
G
C
E
CIRCUIT DIAGRAM
8 - φ 7MOUNTING HOLES
61.5
61.5
13
15
40
5.2
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998