CM1000HA-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
2000
VGE = 20 15
12
(V)
1600 ^{Tj = 25°C}
11
1200
10
800
9
400
87
0
0
2
4
6
8
10
V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 2000A
4
IC = 1000A
2
IC = 400A
0
0
10⁴
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
t_d(off)
t_d(on)
t_f
10²
10¹
10¹
t_r
V_CC = 600V
V_GE = ±15V
R_G = 3.3 Ω
T_j = 125°C
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
2000
1600
OUTPUT CHARACTERISTICS
(TYPICAL)
V_CE = 10V
T_j = 25°C
T_j = 125°C
1200
800
400
0
0
4
8
12 16 20
V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
T_j = 25°C
10³
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
3
2
1
0
0
10³
Tj = 25°C
Tj = 125°C
400 800 1200 1600 2000
I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
C_ies
10²
10²
10¹
1.0 1.5 2.0 2.5 3.0 3.5
V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10³
t_rr
10²
10²
I_rr
C_oes
10¹
V_GE = 0V
C_res
10⁰
10^-1
20
10⁰
10¹
V_CE, (VOLTS)
10²
GATE CHARGE, V_GE
(TYPICAL)
16
V_CC = 400V
V_CC = 600V
12
8
di/dt = -2000A/µsec
T_j = 25°C
10¹
10¹
10²
10³
I_E, (AMPERES)
10¹
10⁴
4
0
0
2000 4000 6000 8000
Q_G, (nC)
Sep.1998