CM1000HA-24H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
U - M4 THD
R
(2 TYP.)
K
P
M
C
E
G
E
C
BA
S - M8 THD
(2 TYP.)
JG
Q
L
T - DIA.
H
(4 TYP.)
F
N
D
E
E
C
G
E
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A
5.12
130.0
B
4.33±0.01 110.0±0.25
C
1.840
46.75
D
1.73+0.04/–0.02 44.0+1.0/–0.5
E
1.46+0.04/–0.02 37.0+1.0/–0.5
F
1.42
36.0
G
1.25
31.8
H
1.18
30.0
J
1.10
28.0
K
1.08
27.5
Dimensions
L
M
N
P
Q
R
S
T
U
Inches
0.79
0.77
0.75
0.61
0.51
0.35
M8 Metric
0.26 Dia.
M4 Metric
Millimeters
20.0
19.5
19.0
15.6
13.0
9.0
M8
Dia. 6.5
M4
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
one IGBT in a single configuration
with a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1000HA-24H is a 1200V
(V_CES), 1000 Ampere Single IGBT
Module.
Type
CM
Current Rating
Amperes
1000
V_CES
Volts (x 50)
24
Sep.1998