PS22A74 Datasheet, PDF (2/11 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module

< Dual-In-Line Package Intelligent Power Module >
PS22A74
TRANSFER MOLDING TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
VCC
Supply voltage
Applied between P-NU,NV,NW
VCC(surge) Supply voltage (surge)
Applied between P-NU,NV,NW
VCES
Collector-emitter voltage
±IC
Each IGBT collector current
TC= 25°C
±ICP
Each IGBT collector current (peak) TC= 25°C, up to 1ms
PC
Collector dissipation
TC= 25°C, per 1 chip
Tj
Junction temperature
Ratings
Unit
900
V
1000
V
1200
V
15
A
30
A
86.9
W
-20~+150
°C
CONTROL (PROTECTION) PART
Symbol
Parameter
VD
Control supply voltage
VDB
Control supply voltage
VIN
Input voltage
VFO
Fault output supply voltage
IFO
Fault output current
VSC
Current sensing input voltage
Condition
Applied between VP1-VPC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
Applied between UP, VP, WP-VPC, UN, VN, WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
Ratings
Unit
20
V
20
V
-0.5~VD+0.5
V
-0.5~VD+0.5
V
1
mA
-0.5~VD+0.5
V
TOTAL SYSTEM
Symbol
Parameter
Condition
Ratings
Unit
VCC(PROT)
TC
Self protection supply voltage limit
(Short circuit protection capability)
Module case operation temperature
VD = 13.5~16.5V, Inverter Part
Tj = 125°C, non-repetitive, up to 2μs
800
V
(Note 1)
-20~+100
°C
Tstg
Storage temperature
Viso
Isolation voltage
-40~+125
°C
60Hz, Sinusoidal, AC 1min, between connected all pins
and heat sink plate
2500
Vrms
Note 1: Tc measurement point is described in Fig.1.
Fig. 1: TC MEASUREMENT POINT
Measurement point for Tc
THERMAL RESISTANCE
Symbol
Parameter
Condition
Min.
Limits
Typ.
Max.
Unit
Rth(j-c)Q
Junction to case thermal
Inverter IGBT part (per 1/6 module)
-
-
1.15 K/W
Rth(j-c)F
resistance
(Note 2)
Inverter FWDi part (per 1/6 module)
-
-
1.60 K/W
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of
DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) is about 0.2K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k).
Publication Date : January 2012
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