XP1073-BD Datasheet, PDF (1/10 Pages) Mimix Broadband – 34.0-37.0 GHz GaAs MMIC Power Amplifier

34.0-37.0 GHz GaAs MMIC
Power Amplifier
February 2010 - Rev 16-Feb-10
Features
Ka-Band 6W Power Amplifier
22.0 dB Small Signal Gain
+37.0 dBm Pulsed Saturated Output Power
24% Power Added Efficiency (PAE %)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
P1073-BD
Chip Device Layout
XP1073-BD
General Description
Mimix Broadband’s four stage 34.0-37.0 GHz GaAs
MMIC power amplifier has a small signal gain of 22.0
dB with 6W saturated output power. This MMIC uses
Mimix Broadband’s GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave Military,
Radar, Satellite and Weather applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+6.0 VDC²
Supply Current (Id1,2,3,4) 400,800,1600,3200 mA
Gate Bias Voltage (Vg)
+0.3 VDC
Input Power (Pin)
TBD
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to +85 ºC
Channel Temperature (Tch)¹ 175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
(2) Under pulsed bias conditions, under CW Psat conditions
further reduction in max supply voltage (~0.5V) is
recommended.
Electrical Characteristics (Ambient Temperature T=25ºC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)²
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power Pulsed (PSAT)²
Drain Bias Voltage (Vd1,2,3,4)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id1) (Vd=5.5V, Vg=-0.7V)
Supply Current (Id2) (Vd=5.5V, Vg=-0.7V)
Supply Current (Id3) (Vd=5.5V, Vg=-0.7V)
Supply Current (Id4) (Vd=5.5V, Vg=-0.7V)
(2) Measured on wafer pulsed.
Units Min. Typ. Max.
GHz
34.0
-
37.0
dB
-
18.0
-
dB
-
10.0
-
dB
-
22.0
-
dB
-
+/-2.0
-
dB
-
50.0
-
dBm
-
+37.0
-
VDC
-
+5.5 +5.8
VDC
-1.2
-0.7
0.0
mA
-
320
350
mA
-
640
710
mA
-
1280 1420
mA
-
2560 2845
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
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