AS4SD32M16 Datasheet, PDF (6/52 Pages) Austin Semiconductor – 512Mb: 32 Meg x 16 SDRAM Synchronous DRAM Memory

SDRAM
AS4SD32M16
CAS Latency
The CAS latency is the delay, in clock cycles, between
the registration of a READ command and the availability of
the first piece of output data. The latency can be set to two or
three clocks.
If a READ command is registered at clock edge n, and the
latency is m clocks, the data will be available by clock edge
n + m. The DQs will start driving as a result of the clock edge
one cycle earlier (n + m - 1), and provided that the relevant
access times are met, the data will be valid by clock edge n +
m. For example, assuming that the clock cycle time is such
that all relevant access times are met, if a READ command is
registered at T0 and the latency is programmed to two clocks,
the DQs will start driving after T1 and the data will be valid by
T2, as shown in Figure 2. Table 2 below indicates the operating
frequencies at which each CAS latency setting can be used.
Reserved states should not be used as unknown
op-
eration or incompatibility with future versions may result.
Operating Mode
The normal operating mode is selected by setting M7 and
M8 to zero; the other combinations of values for M7 and M8
are reserved for future use and/or test modes. The programmed
burst length applies to both READ and WRITE bursts.
Test modes are reserved states should not be used be-
cause unknown operation or incompatibility with future ver-
sions may result.
Write Burst Mode
When M9=0, the burst length programmed via M0-M2
applies to both READ and WRITE bursts; when M9=1, the
programmed burst length applies to READ bursts, but write
accesses are single-location (non-burst) accesses.
FIGURE 2: CAS Latency
TABLE 2: CAS Latency
SPEED
-75
ALLOWABLE OPERATING
FREQUENCY (MHz)
CAS
CAS
LATENCY = 2 LATENCY = 3
<100
<133
AS4SD32M16
Rev. 2.0 10/13
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