APT28GA60BD15 Datasheet, PDF(9/9 Page) Microsemi Corporation

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

APT28GA60BD15 Datasheet, PDF (9/9 Pages) Microsemi Corporation – High Speed PT IGBT

◁

Dynamic Characteristics

+18V

TJ = 25Â°C unless otherwise speciï¬ed

APT28GA60BD_SD15

diF/dt Adjust

APT6017LLL

30Î¼H

D.U.T.

trr/Qrr

Waveform

PEARSON 2878

CURRENT

TRANSFORMER

Figure 9. Diode Test Circuit

1 IF - Forward Conduction Current

2 diF/dt - Rate of Diode Current Change Through Zero Crossing.

3 IRRM - Maximum Reverse Recovery Current.

Zero

4 trr - Reverse Recovery Time, measured from zero crossing where diode

current goes from positive to negative, to the point at which the straight

line through IRRM and 0.25 IRRM passes through zero.

5 Qrr - Area Under the Curve Defined by IRRM and trr.

Figure 10, Diode Reverse Recovery Waveform and Definitions

0.25 IRRM

TO-247 Package Outline

e1 SAC: Tin, Silver, Copper

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

15.49 (.610)

16.26 (.640)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

5.38 (.212)

6.20 (.244)

3.50 (.138)

3.81 (.150)

0.40 (.016)

0.79 (.031)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate

Collector (Cathode)

Emitter (Anode)

D3PAK Package Outline

e3 SAC: Tin, Silver, Copper

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

15.95 (.628)

16.05(.632)

1.04 (.041)

1.15(.045)

13.41 (.528)

13.51(.532)

0.46

0.56

(.018)

(.022)

Plcs}

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

1.22 (.048)

1.32 (.052)

Revised

4/18/95

13.79 (.543)

13.99(.551)

1.27 (.050)

1.40 (.055)

1.98 (.078)

2.08 (.082)

5.45 (.215) BSC

{2 Plcs.}

Revised

8/29/97

11.51 (.453)

11.61 (.457)

3.81 (.150)

4.06 (.160)

(Base of Lead)

Heat Sink (Collector)

and Leads are Plated

Emitter (Anode)

Collector (Cathode)

Gate

Dimensions in Millimeters (Inches)

Microsemiâs products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583

4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262