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APT28GA60BD15 Datasheet, PDF (2/9 Pages) Microsemi Corporation – High Speed PT IGBT
Dynamic Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Cies
Coes
Cres
Qg3
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon2
E6
off
td(on)
tr
td(off)
tf
Eon2
E6
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate- Collector Charge
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
Gate Charge
VGE = 15V
VCE= 300V
IC = 16A
TJ = 150°C, RG = 10Ω4, VGE = 15V,
L= 100uH, VCE = 600V
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 16A
RG = 10Ω4
TJ = +25°C
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 16A
RG = 10Ω4
TJ = +125°C
APT28GA60BD_SD15
Min Typ Max
2109
214
26
90
14
28
Unit
pF
nC
84
A
11
8
ns
101
27
239
μJ
170
11
10
ns
132
114
412
μJ
335
Thermal and Mechanical Characteristics
Symbol Characteristic
RθJC
RθJC
WT
Torque
Junction to Case Thermal Resistance (IGBT)
Junction to Case Thermal Resistance (Diode)
Package Weight
Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min Typ Max Unit
-
-
.56
°C/W
1.35
-
5.9
-
g
10
in·lbf
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.