APT28GA60BD15 Datasheet, PDF (3/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
250
V_GE = 15V
T_J= 55°C
200
T_J= 25°C
150
T_J= 150°C
T_J= 125°C
100
50
0
0
5
10
15
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
280
250μs PULSE
TEST<0.5 % DUTY
240
CYCLE
200
160
120
80
T_J= 25°C
40
T_J= -55°C
T_J= 125°C
0
0 2 4 6 8 10 12 14 16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4
T_J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
3
I_C = 400A
I_C = 200A
2
I_C = 100A
1
0
6
8
10
12
14 16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-.50 -.25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
APT28GA60BD_SD15
250
15V
13V
200
12V
150
11V
10V
100
9V
50
8V
6V
0
0 4 8 12 16 20 24 28 32
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
15
I_C = 16A
T_J = 25°C
V_CE = 120V
10
V_CE = 300V
5
V_CE = 480V
0
0
20
40
60
80 100
GATE CHARGE (nC)
FIGURE 4, Gate charge
5
4
3
I_C = 32A
I_C = 16A
2
1
V_GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I_C = 8A
0
0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
25
50
75 100 125 150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature