APT200GT60JRDQ4 Datasheet, PDF (8/9 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Perfromance Curves
300
250
T_J = 175°C
200
150
T_J = 125°C
100
50
T_J = 25°C
0
T_J = -55°C
0
2
4
6
8
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 25. Forward Current vs. Forward Voltage
4000
T_J = 125°C
V_R = 400V
3000
60A
2000
120A
1000
30A
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs) Figure 27.
Reverse Recovery Charge vs. Current Rate of Change
1.4
1.2
1.0
0.8
I_RRM
0.6
t_rr
0.4
0.2
Q_rr
0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature
450
400
350
300
250
200
150
100
50
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
APT200GT60JRDQ4
250
T_J = 125°C
V_R = 400V
200
150
120A _60A 30A
100
50
0
0
200 400
600 800 1000
-di_F /dt, CURRENT RATE OF CHANGE(A/µs) Figure 26.
Reverse Recovery Time vs. Current Rate of Change
50
45
T_J = 125°C
V_R = 400V
40
35
120A
30
30A
25
20
15
60A
10
5
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Current vs. Current Rate of Change
140
Duty cycle = 0.5
120
T_J = 175°C
100
80
60
40
20
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature