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APT200GT60JRDQ4 Datasheet, PDF (7/9 Pages) Microsemi Corporation – Thunderbolt IGBT
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Typical Performance Curves
APT200GT60JRDQ4
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: TC = 25°C unless otherwise specified.
APT200GT60JRDQ4 Unit
IF(AV)
IF(RMS)
Maximum Average Forward Current (TC = 100°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
60
73
Amps
540
Min Type Max Unit
VF
Forward Voltage
DYNAMIC CHARACTERISTICS
Symbol Characteristic
IF = 60A
IF = 120A
IF = 60A, TJ = 125°C
1.7
2.0
Volts
1.4
Test Conditions
Min Typ Max Unit
trr
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 1A, diF/dt = -100A/µs,
VR = 30V, TJ = 25°C
IF = 60A, diF/dt = -200A/µs
VR = 400V, TC = 25°C
IF = 60A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
IF = 60A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
-
60
-
ns
-
95
-
-
135
-
nC
-
3
-
Amps
-
130
-
ns
-
722
-
nC
-
10
-
Amps
-
140
-
ns
-
2776
-
nC
-
38
-
Amps
0.6
0.5
D = 0.9
0.4
0.7
0.3
0.5
Note:
0.2
t1
0.3
t2
0.1
0.1
Duty Factor D = t1/t2
0.05
0
SINGLE PULSE
Peak TJ = PDM x ZθJC + TC
10-5
10 -4
10 -3
10 -2
10 -1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 24, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
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