APT200GT60JRDQ4 Datasheet, PDF (2/9 Pages) Microsemi Corporation – Thunderbolt IGBT

Dynamic Characteristic
Symbol Characteristic
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector Charge
SSOA _{Switching Safe Operating Area}
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy ⁴
Turn-On Switching Energy ⁵
Turn-Off Switching Energy ⁶
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy ⁴
Turn-On Switching Energy ⁵
Turn-Off Switching Energy ⁶
Thermal and Mechanical Characteristics
Symbol Characteristic / Test Conditions
R_θJC Junction to Case (IGBT)
R_θJC Junction to Case (DIODE)
W_T
Package Weight
Torque Terminals and Mounting Screws
Test Conditions
V_GE = 0V, V_CE = 25V
f = 1MHz
Gate Charge
V_GE = 15V
V_CE= 300V
I_C = 200A
T_J = 150°C, R_G = 2.2Ω , V_GE = 15V,
L = 100μH, V_CE= 600V
Inductive Switching (25°C)
V_CC = 400V
V_GE = 15V
I_C = 200A
R_G = 2.2Ω
T_J = +25°C
Inductive Switching (125°C)
V_CC = 400V
V_GE = 15V
I_C = 200A
R_G = 2.2Ω
T_J = +125°C
V_Isolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
APT200GT60JRDQ4
Min Typ Max Unit
- 8650
-
-
546
-
pF
- 1180
-
-
7.5
-
V
-
946
-
-
58
-
nC
-
430
-
600
A
-
72
-
-
160
-
ns
-
952
-
-
212
-
-
-
-
- 9193
-
μJ
- 19290
-
-
71
-
-
157
-
ns
- 1030
-
-
202
-
-
-
-
- 10460
-
μJ
- 20210
-
Min Typ Max Unit
-
-
0.21
°C/W
-
-
0.48
-
29.2
-
g
-
-
10
in·lbf
-
-
1.1
N·m
2500
-
-
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and FRED leakages.
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R_G is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.