APT150GN60LDQ4 Datasheet, PDF (8/9 Pages) Microsemi Corporation – Thunderbolt IGBT

DYNAMIC CHARACTERISTICS
300
T_J = 25°C
250
200
T_J = 175°C
150
T_J = 125°C
100
50
T_J = -55°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 25. Forward Current vs. Forward Voltage
4000
3500
3000
T_J =125°C
V_R=400V
200A
2500
100A
2000
50A
1500
1000
500
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
1.2
Q_rr
1.0
t_rr
0.8
t_rr
I_RRM
0.6
Q_rr
0.4
0.2
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature
1400
1200
1000
800
600
400
200
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
300
250
T_J =125°C
V_R=400V
200
150
APT150GN60LDQ4(G)
200A
100A
50A
100
50
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
60
T_J =125°C
V_R=400V
50
200A
40
30
100A
20
50A
10
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Current vs. Current Rate of Change
180
160
Duty cycle = 0.5
T_J =175°C
140
120
100
80
60
40
20
0
25 50
75 100 125 150 175
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature