APT150GN60LDQ4 Datasheet, PDF (2/9 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
Symbol Characteristic
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge ⁴
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ⁵
Turn-on Switching Energy (Diode) ⁶
Turn-off Switching Energy ⁷
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ^{5 4}
Turn-on Switching Energy (Diode) ⁶⁵
Turn-off Switching Energy ⁶⁷
Test Conditions
MIN
Capacitance
V_GE = 0V, V_CE = 25V
f = 1 MHz
Gate Charge
V_GE = 15V
V_CE = 300V
I_C = 150A
T_J = 175°C, R_G = 4.3Ω ⁸, V_GE =
15V, L = 100μH,V_CE = 600V
450
Inductive Switching (25°C)
V_CC = 400V
V_GE = 15V
I_C = 150A
R_G = 1.0Ω ⁸
T_J = +25°C
Inductive Switching (125°C)
V_CC = 400V
V_GE = 15V
I_C = 150A
R_G = 1.0Ω ⁸
T_J = +125°C
APT150GN60LDQ4(G)
TYP MAX UNIT
9200
350
pF
300
9.5
V
970
65
nC
510
A
44
110
ns
430
60
8810
8615
μJ
4295
44
110
ns
480
95
8880
9735
μJ
5460
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol ^{Characteristic / Test Conditions}
R_θJC
R_θJC
V_Isolation
Junction to Case (IGBT)
Junction to Case (DIODE)
RMS Voltage (50-60Hz Sinsoidal Waveform from Terminals to Mounting Base for 1 Min.)
W_T
Package Weight
Min Typ Max Unit
-
-
0.28 °C/W
-
-
.30
2500
-
6.1
-
gm
1 Continuous current limited by case temperature.
2 Repetitive Rating: Pulse width limited by maximum junction temperature.
3 For Combi devices, I_ces includes both IGBT and FRED leakages
4 See MIL-STD-750 Method 3471.
5 E_on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
6 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
7 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
8 R_G is external gate resistance, not including R_G(int) nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.