APT150GN60LDQ4 Datasheet, PDF (7/9 Pages) Microsemi Corporation – Thunderbolt IGBT

ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT150GN60LDQ4(G) UNIT
I_F(AV) _{Maximum Average Forward Current (TC = 103°C, Duty Cycle = 0.5)}
I_F(RMS) _{RMS Forward Current (Square wave, 50% duty)}
I_FSM Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
STATIC ELECTRICAL CHARACTERISTICS
120
188
Amps
600
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
DYNAMIC CHARACTERISTICS
I_F = 120A
I_F = 240A
I_F = 120A, T_J = 125°C
2.00
2.44
Volts
1.70
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time ^I_F ^{= 1A, di}_F^{/dt = -100A/µs, V}_R ^{= 30V, T}_J ^{= 25°C}
-
34
ns
t_rr
Reverse Recovery Time
-
47.3
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 120A, di_F/dt = -200A/µs
-
113
nC
V_R = 400V, T_C = 25°C
-
4
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
143
ns
I_F = 120A, di_F/dt = -200A/µs
-
923
nC
V_R = 400V, T_C = 125°C
-
11
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
99
I_F = 120A, di_F/dt = -1000A/µs
-
2631
V_R = 400V, T_C = 125°C
-
45
ns
nC
Amps
0.35
0.30
0.25
0.20
D = 0.9
0.7
0.5
0.15
Note:
0.10 0.3
t1
t2
0.05 _0.1
Duty Factor D = ^t1/t2
0.05
0
10^-5
SINGLE PULSE
10^-4
10^-3
10^-2
Peak T_J = P_DM x Z_θJC + TC
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
T_J (°C)
.1174
.01168
T_C (°C)
.1924
.13207
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL