JAN2N6788 Datasheet, PDF (7/7 Pages) Microsemi Corporation – N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

PACKAGE DIMENSIONS
2N6788 and 2N6790
Dimensions
Ltr
Inch
Millimeters Notes
Min Max Min Max
CD .305 .335 7.75 8.51
CH .160 .180 4.07 4.57
HD .335 .370 8.51 9.40
h
.009 .041 0.23 1.04
J
.028 .034 0.71 0.86
3
k
.029 .045 0.74 1.14
3, 4
LD .016 .021 0.41 0.53
7, 8
LL .500 .750 12.7 19.05 7, 8, 12
LS
.200 TP
5.08 TP
6
LU .016 .019 0.41 0.48
7, 8
L1
.050
1.27
7, 8
L2 .250
6.35
7, 8
P
.100
2.54
Q
.050
1.27
5
r
.010
0.25
10
α
45° TP
45° TP
6
SCHEMATIC CIRCUIT
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true
position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. Lead 1 = source, lead 2 = gate, lead 3 = drain.
T4-LDS-0164, Rev. 1 (121482)
©2012 Microsemi Corporation
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