JAN2N6788 Datasheet, PDF (3/7 Pages) Microsemi Corporation – N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

2N6788 and 2N6790
ELECTRICAL CHARACTERISTICS @ T_A = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25 mA
VDS ≥ VGS, ID = 0.25 mA, Tj = +125 °C
VDS ≥ VGS, ID = 0.25 mA, Tj = -55 °C
Gate Current
VGS = ±20 V, VDS = 0 V
VGS = ±20 V, VDS = 0 V, Tj = +125 °C
Symbol Min. Max.
2N6788
2N6790
V (BR)DSS
V GS(th)1
V GS(th)2
V GS(th)3
I GSS1
I GSS2
100
200
2.0
1.0
4.0
5.0
±100
±200
Unit
V
V
nA
Parameters / Test Conditions
ON CHARACTERISTICS
Drain Current
VGS = 0V, VDS = 80 V
VGS = 0V, VDS = 160 V
Drain Current
VGS = 0V, VDS = 80 V, Tj = +125 °C
VGS = 0V, VDS = 160 V, Tj = +125 °C
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 3.5 A pulsed
VGS = 10 V, ID = 2.25 A pulsed
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 6.0 A pulsed
VGS = 10 V, ID = 3.5 A pulsed
Static Drain-Source On-State Resistance
Tj = +125 °C:
VGS = 10 V, ID = 3.5 A pulsed
VGS = 10 V, ID = 2.25 A pulsed
Diode Forward Voltage
VGS = 0 V, ID = 6.0 A pulsed
VGS = 0 V, ID = 3.5 A pulsed
Symbol Min. Max. Unit
2N6788
2N6790
I DSS1
2N6788
2N6790
I DSS2
2N6788
2N6790
r DS(on)1
2N6788
2N6790
r DS(on)2
2N6788
2N6790
r DS(on)3
2N6788
2N6790
V SD
25
µA
0.25
mA
0.30
0.80
Ω
0.35
0.85
Ω
0.54
1.50
Ω
1.8
1.5
V
T4-LDS-0164, Rev. 1 (121482)
©2012 Microsemi Corporation
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