JAN2N6788 Datasheet, PDF (4/7 Pages) Microsemi Corporation – N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

2N6788 and 2N6790
ELECTRICAL CHARACTERISTICS @ T_A = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
Gate to Source Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
Gate to Drain Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
Symbol Min. Max. Unit
2N6788
2N6790
2N6788
2N6790
2N6788
2N6790
Q g(on)
Q gs
Q gd
18.0
14.3
nC
4.0
3.0
nC
9.0
9.0
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
ID = 6.0 A, VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5 Ω, VDD = 74 V
Rinse time
ID = 6.0 A, VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5 Ω, VDD = 74 V
Turn-off delay time
ID = 6.0 A, VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5 Ω, VDD = 74 V
Fall time
ID = 6.0 A, VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5 Ω, VDD = 74 V
Diode Reverse Recovery Time
di/dt = 100 A/µs, VDD ≤ 50 V, IF = 6.0 A
di/dt = 100 A/µs, VDD ≤ 50 V, IF = 3.5 A
Symbol
2N6788
2N6790
t d(on)
2N6788
2N6790
tr
2N6788
2N6790
t d(off)
2N6788
2N6790
tf
2N6788
2N6790
t rr
Min.
Max. Unit
40
ns
70
50
ns
40
50
ns
70
50
ns
240
400
ns
T4-LDS-0164, Rev. 1 (121482)
©2012 Microsemi Corporation
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