JAN2N3501UB Datasheet, PDF (7/7 Pages) Microsemi Corporation – RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR

PACKAGE DIMENSIONS
Lid
2N3501UB
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
Inch
Millimeters
Min
Max
Min
Max
.046 .056 1.17 1.42
.115 .128 2.92 3.25
.085 .108 2.16 2.74
-
.128
-
3.25
-
.108
-
2.74
.022 .038 0.56 0.97
.017 .035 0.43 0.89
Note Symbol
LS1
LS2
LW
r
r1
r2
Dimensions
Inch
Millimeters
Min
Max
Min
Max
.036 .040 0.91 1.02
.071 .079 1.80 2.01
.016 .024 0.41 0.61
-
.008
-
0.203
-
.012
-
0.305
-
.022
-
0.559
Note
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Lid material: Kovar.
5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
6. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
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