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| JAN2N3501UB Datasheet, PDF (4/7 Pages) Microsemi Corporation – RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR | |||
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2N3501UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
VEB = 5 V; IC = 150 mA; IB1 = 15 mA
Turn-Off Time
IC = 150 mA; IB1 = IB2 = 15 mA
Symbol
ton
toff
Min. Max. Unit
115
ns
1150 ns
SAFE OPERATING AREA (See SOA figure and reference MIL-STD-750 method 3053)
DC Tests
TC = +25 oC, tr > 10 ns; 1 Cycle, t = 1.0 s
Test 1
VCE = 10 V, IC = 113 mA
Test 2
VCE = 50 V, IC = 23 mA
Test 3
VCE = 80 V, IC = 14 mA
Clamped Switching
TA = +25 oC
Test 1
IB = 50 mA, IC = 300 mA
Collector to Emitter Voltage VCE (Volts)
Maximum Safe Operating Area
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 4 of 7
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