JAN2N3501UB Datasheet, PDF (3/7 Pages) Microsemi Corporation – RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR

2N3501UB
ELECTRICAL CHARACTERISTICS @ T_A = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mA, pulsed
Collector-Base Cutoff Current
V_CB = 75 V
V_CB = 150 V
Emitter-Base Cutoff Current
V_EB = 4.0 V
V_EB = 6.0 V
ON CHARACTERISTICS ⁽¹⁾
Forward-Current Transfer Ratio
I_C = 0.1 mA, V_CE = 10 V
I_C = 1.0 mA, V_CE = 10 V
I_C = 10 mA, V_CE = 10 V
I_C = 150 mA, V_CE = 10 V
I_C = 300 mA, V_CE = 10 V
Collector-Emitter Saturation Voltage
I_C = 10 mA, I_B = 1.0 mA
I_C = 150 mA, I_B = 15 mA
Base-Emitter Saturation Voltage
I_C = 10 mA, I_B = 1.0 mA
I_C = 150 mA, I_B = 15 mA
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I_C = 20 mA, V_CE = 20 V, f = 100 MHz
Output Capacitance
V_CB = 10 V, I_E = 0,
100 kHz < f < 1.0 MHz
Input Capacitance
V_EB = 0.5 V, I_C = 0, 100 kHz < f < 1.0 MHz
Symbol
Min. Max. Unit
V_(BR)CEO
150
V
I_CBO
50
nA
10
µA
I_EBO
25
nA
10
µA
h_FE
V_CE(sat)
V_BE(sat)
35
50
75
100 300
20
0.2
V
0.4
0.8
V
1.2
|h_fe|
C_obo
C_ibo
1.5
8.0
8.0
pF
80
pF
(1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%.
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
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