JAN2N3421 Datasheet, PDF (6/6 Pages) Microsemi Corporation – NPN MEDIUM POWER SILICON TRANSISTOR

2N3418S thru 2N3421S
PACKAGE DIMENSIONS
Symbol
CD
CH
HD
LC
LD
LL
LU
L₁
L₂
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min Max Min Max
.305 .335 7.75 8.51
.240 .260 6.10 6.60
.335 .370 8.51 9.40
.200 TP
5.08 TP
.016 .021 0.41 0.53
.500 .750 12.7 19.05
See notes 7, 13, 14
.050
1.27
.250
6.35
.100
2.54
.040
1.02
.029 .045 0.74 1.14
.028 .034 0.71
.86
.010
0.25
45° TP
45° TP
Note
6
7
7
7
5
4
3, 10
9, 10
11
6
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of TP relative to tab. Device may be measured by direct methods or by gauge.
7. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. Lead number 3 is electrically connected to case.
9. Beyond r maximum, TW shall be held for a minimum length of .021 inch (0.53 mm).
10. Lead number 4 omitted on this variation.
11. Symbol r applied to both inside corners of tab.
12. For transistor types 2N3418S, 2N3419S, 2N3420S, 2N3421S, LL is .500 (12.70 mm) minimum and .750 (19.05 mm) maximum.
13. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
14. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
T4-LDS-0192-1, Rev. 1 (111684)
©2011 Microsemi Corporation
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