JAN2N3421 Datasheet, PDF (3/6 Pages) Microsemi Corporation – NPN MEDIUM POWER SILICON TRANSISTOR

2N3418S thru 2N3421S
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Current
I_C = 50 mA, I_B = 0
2N3418S, 2N3420S
2N3419S, 2N3421S
Symbol
V _(BR)CEO
Min.
60
80
Max.
Collector-Emitter Cutoff Current
V_BE = -0.5 V, V_CE = 80 V
V_BE = -0.5 V, V_CE = 120 V
2N3418S, 2N3420S
2N3419S, 2N3421S
I _CEX
0.3
0.3
Collector-Base Cutoff Current
V_CE = 45 V, I_B = 0
V_CE = 60 V, I_B = 0
2N3418S, 2N3420S
2N3419S, 2N3421S
I _CEO
5.0
5.0
Emitter-Base Cutoff Current
V_EB = 6.0 V, I_C = 0
V_EB = 8.0 V, I_C = 0
I _EBO
0.5
10
ON CHARACTERISTICS ⁽¹⁾
Parameters / Test Conditions
Forward-Current Transfer Ratio
I_C = 100 mA, V_CE = 2.0 V
Symbol
2N3418S, 2N3419S
2N3420S, 2N3421S
I_C = 1.0 A, V_CE = 2.0 V
I_C = 2.0 A, V_CE = 2.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
h _FE
2N3418S, 2N3419S
2N3420S, 2N3421S
I_C = 5.0 A, V_CE = 5.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
Collector-Emitter Saturation Voltage
I_C = 1.0 A, I_B = 0.1 A
I_C = 2.0 A, I_B = 0.2 A
Base-Emitter Saturation Voltage
I_C = 1.0 A, I_B = 0.1 A
I_C = 2.0 A, I_B = 0.2 A
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
I_C = 0.1 A, V_CE = 10 V, f = 20 MHz
Output Capacitance
V_CB = 10 V, I_E = 0, 100 kHz ≤ f ≤ 1.0 MHz
NOTES: (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
V _CE(sat)
V _BE(sat)
Symbol
|h _fe|
C _obo
Min.
20
40
20
40
15
30
10
15
0.6
0.7
Min.
1.3
Max.
60
120
0.25
0.5
1.2
1.4
Max.
0.8
150
Unit
V
µA
µA
µA
Unit
V
V
Unit
pF
T4-LDS-0192-1, Rev. 1 (111684)
©2011 Microsemi Corporation
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